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| BCX38B BCX38B NPN Version 2006-07-24 Power dissipation Verlustleistung E BC Si-Epitaxial Planar Darlington-Transistors Si-Epitaxial Planar Darlington-Transistoren NPN 625 mW TO-92 (10D3) 0.18 g 16 Plastic case Kunststoffgehause Weight approx. - Gewicht ca. 18 9 Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 2 x 2.54 Dimensions - Mae [mm] Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCEO VCBO VEBO Ptot IC ICM Tj TS Grenzwerte (TA = 25C) BCX38B 60 V 80 V 10 V 625 mW 1) 800 mA 2A -55...+150C -55...+150C Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis ) 2 Kennwerte (Tj = 25C) Typ. - - - - - - Max. - - 1.25 V 1.8 V 100 nA 100 nA IC = 100 mA, VCE = 5 V IC = 500 mA, VCE = 5 V IC = 800 mA, IB = 8 mA Base-Emitter voltage - Basis-Emitter-Spannung 2) IC = 800 mA, VCE = 5 V Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 60 V, (E open) Emitter-Base cutoff current - Emitter-Basis-Reststrom VEB = 8 V, (C open) hFE hFE VCEsat VBE ICBO IEB0 2000 4000 - - - - Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) 1 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 BCX38B Characteristics (Tj = 25C) Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA Kennwerte (Tj = 25C) < 200 K/W 1) Pinning - Anschlubelegung T 1 T 2 E B C T1 T2 Si-Epitaxial Planar Darlington-Transistors Si-Epitaxial Planar Darlington-Transistoren E B C 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] 1 Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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